By O. Madelung (Eds.)

ISBN-10: 1483124274

ISBN-13: 9781483124278

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Additional info for Advances in Solid State Physics. Festk–rper Probleme, Volume 10

Example text

It has been pro8 0 8 2 posed ( ) , ( ) that the current increase is due to impact ionization of the shallow trap levels by hot electrons combined with a decreasing capture cross-section. It should be noticed that the detailed form of the current increase depends on the 8 2 internal impedance of the voltage supply ( ) . The curves in Fig.

From the slope of n 0 as a function of temperature one may furthermore determine the energy of the donor level. Results of this type have been found to agree with 80 82 83 independent Hall measurements ( ) , ( ) , ( ) . For the CdS and ZnO crystals in Figs. 8 the donor levels are found to be respectively 15 meV and about 50 meV below the conduction band. From a detailed analysis of the variation of J k with temperature it is also possible to obtain an estimate of the ratio Sjœ^ where S n is the capture cross section of the trapping centers (see eqn.

0 50 100 150 200 250 300 350 V Cvl 59 Fig. 8 Current-voltage curves at various temperatures for a semiconducting ZnO crystal in the longitudinal configuration. After 8 2 Meyer et al. ( ) . From the slope of n 0 as a function of temperature one may furthermore determine the energy of the donor level. Results of this type have been found to agree with 80 82 83 independent Hall measurements ( ) , ( ) , ( ) . For the CdS and ZnO crystals in Figs. 8 the donor levels are found to be respectively 15 meV and about 50 meV below the conduction band.

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Advances in Solid State Physics. Festk–rper Probleme, Volume 10 by O. Madelung (Eds.)


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